Nanodevices for Integrated Circuit Design

  • 4h 27m
  • Abhishek Kumar, K. Srinivasa Rao, Prasantha R. Mudimela, Suman Lata Tripathi
  • John Wiley & Sons (US)
  • 2023

NANODEVICES FOR INTEGRATED CIRCUIT DESIGN

Nanodevices are an integral part of many of the technologies that we use every day. It is a constantly changing and evolving area, with new materials, processes, and applications coming online almost daily.

Increasing demand for smart and intelligent devices in human life with better sensing, communication and signal processing is increasingly pushing researchers and designers towards future design challenges based upon internet-of-things (IoT) applications. Several types of research have been done at the level of solid-state devices, circuits, and materials to optimize system performance with low power consumption. For suitable IoT-based systems, there are some key areas, such as the design of energy storage devices, energy harvesters, novel low power high-speed devices, and circuits. Uses of new materials for different purposes, such as semiconductors, metals, and insulators in different parts of devices, circuits, and energy sources, also play a significant role in smart applications of such systems. Emerging techniques like machine learning and artificial intelligence are also becoming a part of the latest developments in an electronic device and circuit design.

This groundbreaking new book will, among other things, aid developing countries in updating their semiconductor industries in terms of IC design and manufacturing to avoid dependency on other countries. Likewise, as an introduction to the area for the new-hire or student, and as a reference for the veteran engineer in the field, it will be helpful for more developed countries in their pursuit of better IC design. It is a must have for any engineer, scientist, or other industry professional working in this area.

About the Author

Suman Lata Tripathi, PhD, is a professor at Lovely Professional University with more than 21 years of experience in academics. She has published more than 103 research papers in refereed journals and conferences. She has organized several workshops, summer internships, and expert lectures for students, and she has worked as a session chair, conference steering committee member, editorial board member, and reviewer for IEEE journals and conferences. She has published three books and currently has multiple volumes scheduled for publication from Wiley-Scrivener.

Abhishek Kumar, PhD, is an associate professor at and obtained his PhD in the area of VLSI Design for Low Power and Secured Architecture from Lovely Professional University, India. With over 11 years of academic experience, he has published more than 30 research papers and proceedings in scholarly journals. He has also published nine book chapters and one authored book. He has worked as a reviewer and program committee member and editorial board member for academic and scholarly conferences and journals, and he has 11 patents to his credit.

K. Srinivasa Rao, PhD, is a professor and Head of Microelectronics Research Group, Department of Electronics and Communication Engineering at the Koneru Lakshmaiah Education Foundation, India. He has earned multiple awards for his scholarship and has published more than 150 papers in scientific journals and presented more than 55 papers at scientific conferences around the world.

Prasantha R. Mudimela, PhD, is a professor in the Department of Electronics and Communication Engineering, GITAM (deemed to be University), Hyderabad campus, India. He has two years of postdoc experience from the University of Namur, Belgium and KAUST, Saudi Arabia. He has over 15 years of teaching and research experience, and he has published over 45 refereed journal and conference papers.

In this Book

  • List of Contributors
  • Growth of Nano-Wire Field Effect Transistor in 21st Century
  • Impact of Silicon Nanowire-Based Transistor in IC Design Perspective
  • Kink Effect in Field Effect Transistors—Different Models and Techniques
  • Next Generation Molybdenum Disulfide FET—Its Properties, Evaluation, and Its Applications
  • Impact of Working Temperature on the ION/IOFF Ratio of a Hetero Step-Shaped Gate TFET With Improved Ambipolar Conduction
  • Analysis of RF with DC and Linearity Parameter and Study of Noise Characteristics of Gate-All-Around Junctionless FET (GAA-JLFET) and Its Applications
  • E-Mode-Operated Advanced III-V Heterostructure Quantum Well Devices for Analog/RF and High-Power Switching Applications
  • Design of FinFET as Biosensor
  • Biodegradable and Flexible Electronics—Types and Applications
  • Novel Parameters Extraction Method of High-Speed PIN Diode for Power Integrated Circuit
  • Edge AI – A Promising Technology
  • Tunable Frequency Oscillator
  • Introduction to Nanomagnetic Materials for Electronic Devices—Fundamental, Synthesis, Classification and Applications
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